Researcher Database


Freeword

MATSUMOTO Takahiro

FacultyGraduate School of Design and Architecture Industrial Innovation Design
PositionProfessor
Mailmatsumotosda.nagoya-cu.ac.jp
HomepageURL
Birthday
Last Updated :2019/07/06

Researcher Profile and Settings

Association Memberships

  • The Japan Society of Applied Physics
  • Society of Muon and Meson Science of Japan

Committee Memberships

  • International Vacuum Nanoelectronics Conference, International Advisory Committee

Research Activities

Research Areas

  • Nano/Micro science, Nanostructural chemistry
  • Nano/Micro science, Nanostructural physics
  • Nano/Micro science, Nanomaterials chemistry
  • Nano/Micro science, Nanomaterials engineering
  • Applied physics, Optical engineering, Photon science
  • Quantum beam science, Quantum beam science
  • Mechanical engineering, Thermal engineering

Published Papers

  • Observation of Goos-Hänchen Shift in Plasmon-induced Transparency, Yusuke Hirai, Kouki Matsunaga, Yoichiro Neo, Takahiro Matsumoto, and Makoto Tomita, Appl. Phys. Lett., 112, 051101 - 1-5, Refereed
  • Demonstration of Electron Beam Laser Excitation in the UV Range using a GaN/AlGaN Multiquantum Well Active Layer, Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Takahiro Matsumoto, Scientific Reports, 7, Refereed
  • Tailored Plasmon-induced Transparency in Attenuated Total Reflection Response in a Metal–insulator–metal Structure, Kouki Matsunaga, Yusuke Hirai, Yoichiro Neo, Takahiro Matsumoto, and Makoto Tomita, Scientific Reports, 7, Refereed
  • Quantum Twin Spectra in Nanocrystalline Silicon, Takahiro Matsumoto, Takashi Ohhara, Hidehiko Sugimoto, Stephen Bennington, and Susumu Ikeda, Phys. Rev. Materials (Rapid), 1, 051601 - 051606, Refereed
  • Demonstration of Electron Beam Excitation Laser using a GaInN-based Multiquantum Well Active Layer, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto, Applied Physics Express, 9, 101001 - 101003, Refereed
  • Transformation from Plasmon-induced Transparence to -induced Absorption through the Control of Coupling Strength in Metal-insulator-metal Structure, Yoichiro Neo, Takahiro Matsumoto, Takeshi Watanabe, Makoto Tomita, and Hidenori Mimura, Optics Express, 24, 26201 - 26208, Refereed
  • Attenuated Total Reflection Response to Wavelength Tuning of Plasmon-induced Transparency in a Metal–insulator–metal Structure, Kouki Matsunaga, Takeshi Watanabe, Yoichiro Neo, Takahiro Matsumoto, and Makoto Tomita, Optics Letters, 41, 5274 - 5277, Refereed
  • Perfect Blackbody Radiation from a Graphene Nanostructure with Application to High-temperature Spectral Emissivity Measurements, Takahiro Matsumoto, Tomoaki Koizumi, Yasuyuki Kawakami, Koichi Okamoto, and Makoto Tomita, Optics Express, 21, 30964 - 30974, Refereed
  • Propagation of the Centroid of Poynting Vector in Transversely Phase Modulated Optical Beams in Spatially Dispersive Media, Aminul Talukder, Tsuyoshi Matsuo, Takahiro Matsumoto, and Makoto Tomita, Phys. Rev. A, 88, 063842 - 1-6, Refereed
  • Handheld Deep Ultraviolet Emission Device Based on Aluminum Nitride Quantum Wells and Graphene Nanoneedle Field Emitters, Takahiro Matsumoto, Sho Iwayama, Takao Saito, Yasuyuki Kawakami, Fumio Kubo, and Hiroshi Amano, Optics Express, 20, 24320 - 24329, Refereed, OSA Spotlight Selected Paper
  • Necessary Conditions for Two-Lobe Patterns in Field Emission Microscopy, Yoichiro Neo, Takahiro Matsumoto, Makoto Tomita, Masahiro Sasaki, and Hidenori Mimura, Jpn. J. Appl. Phys., 51, 115601 - 115604, Refereed
  • Fourier Analysis of Slow and Fast Image Propagation through Single and Coupled Image Resonators, Parvin Sultana, Takahiro Matsumoto, and Makoto Tomita, International Journal of Optics, 2012, Refereed
  • Delayed Optical Images through Coupled Resonator Induced Transparency, Parvin Sultana, Akira Takami, Takahiro Matsumoto, and Makoto Tomita, Optics Letters, 35, 3414 - 3416, Refereed
  • Advanced and delayed images through an image resonator, Makoto Tomita, Parvin Sultana, Akira Takami, and Takahiro Matsumoto, Optics Express, 18, 12599 - 12605, Refereed
  • Modified Blackbody Radiation Spectrum of a Selective Emitter with Application to Incandescent Lamp Design, Takahiro Matsumoto and Makoto Tomita, Optics Express, 18, A192 - A200, Refereed
  • Revealing Real Images of Cloverleaf Pattern Emission Sites by using Field Ion Microscopy, Yoichiro Neo, Takahiro Matsumoto, Makoto Tomita, Masahiro Sasaki, Toru Aoki, and Hidenori Mimura, J. Vac. Sci. Technol. B, 28, C2A1 - C2A4, Refereed
  • Emission Characteristics and Application of Graphite Nanospine Cathode, Atsuo Jyouzuka, Tomonori Nakamura, Yoshihiro Onizuka, Hidenori Mimura, Takahiro Matsumoto, and Hiroshi Kume, J. Vac. Sci. Technol. B, 28, Refereed
  • Tunable Fano Interference Effect in Coupled-Resonator-Induced Transparency, Makoto Tomita, Kouki Totsuka, Ryousuke Hanamura, and Takahiro Matsumoto, J. Opt. Soc. Am. B., 26, 813 - 818, Refereed
  • Observation of Normal and Anomalous Dispersions in a Microsphere Taper Fiber System, Makoto Tomita, Masayuki Okishio, Takahiro Matsumoto, and Kouki Totsuka, J. Phys. Soc. Jp., 78, 035001 - 1-2, Refereed
  • Raman Characterization of Nanocrystalline Silicon Films, O. P. Chikalova-Luzina, T. Matsumoto, M. Kondo, and V. Vyatkin, Integrated Ferroelectrics, 103 (1), 25 - 31, Refereed
  • Determining the Physisorption Energies of Molecules on Graphene Nanostructures by Measuring the Stochastic Emission-current Fluctuation, Takahiro Matsumoto, Yoichiro Neo, Hidenori Mimura, and Makoto Tomita, Phys. Rev. E, 77, 031611 - 1-4, Refereed
  • Depth Profiling the Whispering Gallery Modes in TiO2:Eu Microspheres using Cathode Luminescence, Makoto Tomita, Hiroshi Ikari, Hidenori Mimura, and Takahiro Matsumoto, Optics Letters, 33, 336 - 338, Refereed
  • Modification of the Field Enhancement Factor for a Field Emitter with a Surrounding Electrode Stabilized using a Field Effect Transistor, Y. Neo, T. Matsumoto, H. Shimawaki, H. Mimura, and K. Yokoo, J. Vac. Sci. Technol. B, 26, 751 - 754, Refereed
  • Dependence of the Light Emission Characteristics on the Neon Gas Pressure in an Electron Beam Pumped Light Source using a Field Emitter, K. Shiozawa, Y. Neo, M. Okada, H. Kume, T. Matsumoto, T. Ikedo, M. Takahashi, G. Hashiguchi, and H. Mimura, J. Vac. Soc. Japan, 50, 319 - 323, Refereed
  • Stabilization of Electron Emission from Nanoneedles with Two Dimensional Graphene Sheet Structure in a High Residual Pressure Region, T. Matsumoto, Y. Neo, H. Mimura, M. Tomita, N. Minami, Appl. Phys. Lett., 90, 103516 - 1-3, Refereed
  • Fabrication and Characteristics of Novel Graphite Field-emitters for Application to Electron-beam-pumped Light Sources, K. Shiozawa, Y. Neo, M. Okada, H. Kume, T. Matsumoto, T. Ikedo, M. Takahashi, G. Hashiguchi, and H. Mimura, J. Vac. Sci. Technol. B, 25, 666 - 669, Refereed
  • Observation of Whispering Gallery Modes in Cathode Luminescence in TiO2:Eu3+ Microspheres, M. Tomita, K. Totsuka, H. Ikari, K. Ohara, H. Mimura, H. Watanabe, H. Kume, and T. Matsumoto, Appl. Phys. Lett., 89, 061126 - 1-3, Refereed
  • Field Emission Characteristics of Graphite Nano-crater Cold Cathode and Its Application to Scanning Electron Microscopy, Y.Neo,H. Mimura, and T. Matsumoto, Appl. Phys. Lett., 88, 073511 - 1-3, Refereed
  • Smith-Purcell Radiation from Ultraviolet to Infrared using Si-field Emitter, Y. Neo, H. Shimawaki, T. Matsumoto, and H. Mimura, J. Vac. Sci. Tech. B, 24, 924 - 926, Refereed
  • A Combinatorial Approach to the Discovery and Optimization of YCa4O(BO3)3-based Luminescent Materials, H. Sano, T. Matsumoto, Y. Matsumoto, and H. Koinuma, Appl. Surf. Sci., 252, 2493 - 2496, Refereed
  • ReCa4O(BO3) Thin Films as New Luminescent Materials Screened by the Combinatorial Method, H. Sano, T. Matsumoto, Y. Matsumoto, and H. Koinuma, J. Phys. Chem. Solids, 66, 2112 - 2115, Refereed
  • High Intensity Pulse X-ray Generation by using Graphite-nanocrater Cold Cathode, T. Matsumoto and H. Mimura, J. Vac. Sci. Tech. B, 23, 831 - 835, Refereed
  • Emission Characteristics and Application of Semiconductor Field Emitters, H. Mimura, Y. Neo, H. Shimawaki, T. Matsumoto, and K. Yokoo, Appl. Surf. Sci., 244, 498 - 503, Refereed
  • Y1-xEuxCa4O(BO3)2 Thin Film as a Luminescent Material Screened by the Combinatorial Method, H. Sano, T. Matsumoto, Y. Matsumoto, and H. Koinuma, Appl. Phys. Lett., 86, 021104 - 1-3, Refereed
  • Intense Electron Emission from Graphite Nanocraters and Their Application to Time-Resolved X-ray Radiography, T. Matsumoto and H. Mimura, Appl. Phys. Lett., 84, 1804 - 1806, Refereed
  • Comparative Analysis of the Si Dangling Bonds Saturation by H or D in Gas and Liquid Phases, O. P. Chikalova-Luzina and T. Matsumoto, Appl. Surf. Sci., 237, 45 - 50, Refereed
  • Point X-ray Source using Graphite Nanofibers and its Application to X-ray Radiography, T. Matsumoto and H. Mimura, Appl. Phys. Lett., 82, 1637 - 1639, Refereed
  • Correlation Between Grain Size and Optical Properties in Zinc Oxide Thin Films, T. Matsumoto, H. Kato, K. Miyamoto, M. Sano, E. Zhukov, and T. Yao, Appl. Phys. Lett., 81, 1231 - 1233, Refereed, 130 scitations
  • Ratio of Deuterium- to Hydrogen Termination on Silicon Surface in Aqueous Electrolyte Solutions, O. P. Chikalova-Luzina and T. Matsumoto, Appl. Phys. Lett., 80, 4507 - 4509, Refereed
  • Isotope Effect in the Absorption of H and D on the Si Crystal Surface from Electrolyte, O. P. Chikalova-Luzina and T. Matsumoto, Vacuum, 67, 27 - 30, Refereed
  • Nanostructure of Hydrogen and Deuterium Terminated Porous Silicon, Jun-ichi Suzuki, Masato Ohnuma, and Takahiro Matsumoto, J. Phys. Soc. Jpn, 70, 303 - 305, Refereed
  • Evidence of Quantum Size Effect in Nanocrystalline Silicon by Optical Absorption, T. Matsumoto, M. Ohnuma, J. Suzuki, Y. Kanemitsu, and Y. Masumoto, Phys. Rev. B, 63, 195322 - 1-5, Refereed
  • White Color Electroluminescence of Europium Silicate Thin Film, Jifa Qi, Takahiro Matsumoto, Masanori Tanaka, and Yasuaki Masumoto, J. Lumin., 82, 185 - 187, Refereed
  • Europium Silicate Thin Film on Silicon Substrates Fabricated by a Radio Frequency Sputtering Methods, J. Qi, T. Matsumoto, M. Tanaka, and Y. Masumoto, J. Phys. D: Applied Physics, 33, 2074 - 2078, Refereed
  • Laser Ultrasonics for Measurements of High-Temperature Elastic Properties and Internal Temperature Distribution, T. Matsumoto, Y. Nagata, T. Nose and K. Kawashima, Rev. Sci. Instrum., 72, 2777 - 2783, Refereed
  • Measurement of High-Temperature Elastic Properties of Ceramics by Laser Ultrasonic Method, T. Matsumoto, T. Nose, Y. Nagata, K. Kawashima, H. Nakano, and S. Nagai, J. Am. Ceram. Soc., 84, 1521 - 1525, Refereed
  • Characterization of Simultaneously Fabricated Silicon and Silicon Monooxide Nanowires, J. Qi, T. Matsumoto, and Y. Masumoto, Jpn. J. Appl. Phys., 40, L134 - L136, Refereed
  • Preparation of White Light Electroluminescent Europium Silicate Thin Films, J. Qi, T. Matsumoto, M. Tanaka, and Y. Masumoto, Electrochemical and Solid-State Letters, 3, 239 - 241, Refereed
  • The Effect of Deuterium on the Optical Properties of Free Standing Porous Silicon Layers, T. Matsumoto, A. I. Belogorokhov, L. I. Berogorokhova, Y. Masumoto, and E. A. Zhukov, Nanotechnology, 11, 340 - 347, Refereed
  • Significant Photoinduced Refractive Index Change Observed in Porous Silicon Fabry-Perot Resonators, M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida, Appl. Phys. Lett., 76, 1990 - 1992, Refereed
  • Electroluminescence of Europium Silicate Thin Film on Silicon, J. Qi, T. Matsumoto, M. Tanaka, and Y. Masumoto, Appl. Phys Lett., 74, 3203 - 3205, Refereed
  • Isotope Energy Shift of Luminescence in Hydrogen- and Deuterium Terminated Porous Silicon, T. Matsumoto, S. V. Nair, and Y. Masumoto, Bull. Mater. Sci., 22, 369 - 376, Refereed
  • Deep Level Energy States in Porous Silicon and Porous Silicon Carbide Determined by Space-Charge-Limited-Current Measurements, T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto, Appl. Surf. Sci., 142, 569 - 573, Refereed
  • Determination of Localized States in Porous Silicon, T. Matsumoto, J. Qi, H. Mimura, N. Koshida, and Y. Masumoto, J. Lumin., 80, 203 - 206, Refereed
  • Effect of Surface Termination on the Electronic States in Nanocrystalline Silicon, T. Matsumoto, G. Arata, S. V. Nair, and Y. Masumoto, Jpn. J. Appl. Phys., 38, 589 - 592, Refereed
  • Deep-Level Energy States in Nanostructural Porous Silicon, T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto, Jpn. J. Appl. Phys., 38, 539 - 541, Refereed
  • Enhancement in Electron Emission from Polycrystalline Silicon Field Emitter Arrays Coated with Diamond-like Carbon, H. Mimura, G. Hashiguchi, M. Okada, T. Matsumoto, M. Tanaka, and K. Yokoo, J. Appl. Phys., 84, 3378 - 3381, Refereed
  • The Density of States in Nanocrystalline Silicon Determined by Space-Charge-Limited-Current Measurements, T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto, J. Appl. Phys., 84, 6157 - 6161, Refereed
  • Fabrication of Multiperiod Si/SiO2/Ge Layered through Chemical Bond Manipulation, K. Prabhakaran, T. Matsumoto, T. Ogino, and Y. Masumoto, Appl. Phys. Lett., 72, 3169 - 3171, Refereed
  • Inverted Staebler-Wronski Effect in Nanocrystalline Silicon, T. Matsumoto, M. Kondo, S. V. Nair, and Y. Masumoto, J. Noncryst. Solids, 227-230, 320 - 323, Refereed
  • Luminescence Mechanism of As-prepared and Oxidized Porous Silicon, Y. Kanemitsu, H. Mimura, T. Matsumoto, and T. Nakamura, J. Lumin., 72-74, 344 - 346, Refereed
  • Electroluminescence from Deuterium Terminated Porous Silicon, T. Matsumoto, Y. Masumoto, T. Nakagawa, M. Hashimoto, K. Ueno, and N. Koshida, Jpn. J. Appl. Phys., 36, L1089 - L1091, Refereed
  • Coupling effect of surface vibration and quantum confinement carriers in porous silicon, T. Matsumoto, Y. Masumoto, S. Nakashima, H. Mimura, and N. Koshida, Appl. Surf. Sci., 113/114, 140 - 144, Refereed
  • Luminescence from Deuterium Terminated Porous Silicon, T. Matsumoto, Y. Masumoto, S. Nakashima, and N. Koshida, Thin Solid Films, 297, 31 - 34, Refereed
  • Deterioration of the Frequency-Conversion Efficiency of a LiTaO3 Waveguide Device with Nonlinear Quasi-Phase-Matched Second-Harmonic Generation, Y. Yamamoto, S. Yamaguchi, N. Yamada, T. Matsumoto, and Y. Kondo, Jpn. J. Appl. Phys., 35, 3902 - 3903, Refereed
  • Nonlinear Optical Properties of Porous Silicon, Y. Kanemitsu, T. Matsumoto, and H. Mimura, J. Noncryst. Solids, 198-200, 977 - 980, Refereed
  • Green and blue light emitting devices usingSi-based porous materials, H. Mimura, T. Matsumoto, and Y. Kanemitsu, J. Noncryst. Solids, 198-200, 961 - 964, Refereed
  • Quasi Phase Matched Second Harmonic Generation in a Periodic Lens Sequence Wave Guide with a Relatively Wide Wavelength-tuned Width, Y. Yamamoto, S. Yamaguchi, N. Yamada, K. Ueda, and T. Matsumoto, Jpn. J. Appl. Phys., 34, 6382 - 6384, Refereed
  • Light Emitting Devices Using Porous Silicon and Porous Silicon Carbide, H. Mimura, T. Matsumoto, and Y. Kanemitsu, Solid-State Electronics, 40, 501 - 504, Refereed
  • Photo- and Electroluminescence from Elecrochemically Polished Silicon, T. Matsumoto, H. Mimura, and Y. Kanemitsu, Jpn. J. Appl. Phys., 34, L1318 - L1321, Refereed
  • Optically Induced Absorption in Porous Silicon and Its Application to Logic Gates, T. Matsumoto, M. Daimon, H. Mimura, Y. Kanemitsu, and N. Koshida, J. Electrochem. Soc., 142, 3528 - 3533, Refereed
  • PL properties of porous Si anodized with various light illuminations, H. Mimura, T. Matsumoto, and Y. Kanemitsu, Appl. Surf. Sci., 92, 396 - 399, Refereed
  • Si-based optical devices using porous materials, H. Mimura, T. Matsumoto, and Y. Kanemitsu, Appl. Surf. Sci., 92, 598 - 605, Refereed
  • Photoluminescence from Silicon Quantum Crystallites: Core and Surface States, Y. Kanemitsu, H. Uto, and T. Matsumoto, Jpn. J. Appl. Phys., 34, 89 - 91, Refereed
  • Observation and Formulation of Two-Dimensional Speckle in the Space and the Time Domains, M. Tomita and T. Matsumoto, J. Opt. Soc. Am. B, 12, 170 - 174, Refereed
  • Transport Study of Self-Supporting Porous Silicon, A. Fejfar, I. Pelant, E. Sipek, J. Kocka, G. Juska, T. Matsumoto, and Y. Kanemitsu, Appl. Phys. Lett., 66, 1098 - 1100, Refereed
  • Light Emitting Diode Using Porous Silicon, Hidenori Mimura, Takahiro Matsumoto, and Yoshihiko Kanemitsu, J. Phys. Soc. Jpn, 63, 203 - 210, Refereed
  • Picosecond Carrier Relaxation Processes in Porous Silicon, Takahiro Matsumoto, Hidenori Mimura, and Yoshihiko Kanemitsu, J. Phys. Soc. Jpn, 63, 182 - 189, Refereed
  • Visible Electroluminescence from µc-SiC / porous Si / c-Si PN Junctions, Hidenori Mimura, Toshiro Futagi, Takahiro Matsumoto, Masakazu Katsuno, Yasumitsu Ohta, and Koichi Kitamura, International Journal of Optoelectronics, 9, 211 - 215, Refereed
  • Blue Electroluminescence from Porous Silicon Carbide, H. Mimura, T. Matsumoto, and Y. Kanemitsu, Appl. Phys. Lett., 65, 3350 - 3352, Refereed
  • Blue Light Emission from Rapid-Thermally-Oxidized Porous Silicon, H. Mimura, T. Futagi, T. Matsumoto, T. Nakamura, and Y. Kanemitsu, Jpn. J. Appl. Phys., 33, 586 - 589, Refereed
  • Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates, T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, Jpn. J. Appl. Phys., 33, L35 - L36, Refereed
  • A Visible Light-Emitting Diode Using a PN Junction of Porous Silicon and Microcrystalline Silicon Carbide, H. Mimura, T. Futagi, T. Matsumoto, and Y. Kanemitsu, J. Noncryst. Solids, 164-166, 949 - 952, Refereed
  • Ultrafast Electronic Relaxation Processes in Porous Silicon, T. Matsumoto, O. B. Wright, T. Futagi, H. Mimura, and Y. Kanemitsu, J. Noncryst. Solids, 164-166, 953 - 956, Refereed
  • Origin of the Blue and Red Photoluminescence from Oxidized Porous Silicon, Y. Kanemitsu, T. Matsumoto, T. Futagi, and H. Mimura, Phys. Rev. B, 49, 14732 - 14735, Refereed, 102 scitations
  • Blue-Green Luminescence fromPorous Silicon Carbide, T. Matsumoto, T. Tamaki, T. Futagi, H. Mimura, and Y. Kanemitsu, Appl. Phys. Lett., 64, 226 - 228, Refereed, 242 scitations
  • Optical Bistability using Photoinduced Absorption Change in Porous Silicon, Y. Kanemitsu and T. Matsumoto, Superlattices and Microstructures, 15, 61 - 63, Refereed
  • Visible Light Emission from a PN Junction of Porous Silicon and Microcrystalline Silicon Carbide, T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura, and K. Kitamura, Appl. Phys. Lett., 63, 1209 - 1210, Refereed
  • Microstructure and Optical Properties of Free-Standing Porous Silicon Films: Size Dependence of Absorption Spectra in Si Nanometer-sized Crystallites, Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, Phys. Rev. B, 48, 2827 - 2830, Refereed, 501 scitations
  • Ultrafast Decay Dynamics of Luminescence in Porous Silicon, T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, Phys. Rev. B, 47, 13876 - 13879, Refereed
  • Hydrogen Termination and Optical Properties of Porous Silicon: Photochemical Etching Effect, Y. Kanemitsu, T. Matsumoto, T. Futagi, and H. Mimura, Jpn. J. Appl. Phys., 32, 411 - 414, Refereed
  • Preparation of µc-SiC and Its Application for Light Emitting Diodes, H. Mimura, T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, and K. Kitamura, Appl. Surf. Sci., 65/66, 473 - 478, Refereed
  • Visible Photoluminescence of Silicon-Based Nanostructure: Porous Silicon and Small Silicon-Based Clusters, Y. Kanemitsu, K. Suzuki, H. Uto, Y. Masumoto, T. Matsumoto, S. Kyushin, K. Higuchi, and H. Matsumoto, Appl. Phys. Lett., 61, 2446 - 2448, Refereed
  • Visible Electroluminescence from P-Type Crystalline Silicon / Porous Silicon / N-type Microcrystalline Silicon Carbon PN Junction Diodes, T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura, and K. Kitamura, Jpn. J. Appl. Phys., 31, L616 - L618, Refereed
  • Picosecond Luminescence Decay in Porous Silicon, T. Matsumoto, M. Daimon, T. Futagi, and H. Mimura, Jpn. J. Appl. Phys., 31, L619 - L621, Refereed
  • Femtosecond Vibrational Relaxation Measurement of Azulene Using Temporally Incoherent Light, T. Matsumoto, K. Ueda, and M. Tomita, Chem. Phys. Lett., 191, 627 - 632, Refereed
  • High Resolution Laser Picosecond Acoustics in Thin Films, O. B. Wright, T. Matsumoto, T. Hyoguchi, and K. Kawashima, Physical Acoustics, 65, 695 - 702, Refereed
  • Nonlinear Dynamical Relaxation Processes in Semiconductor-Doped Glasses at Liquid Nitrogen Temperature, M. Tomita, T. Matsumoto, and M. Matsuoka, J. Opt. Soc. Am. B, 6, 165 - 170, Refereed
  • Stabilization of a CW Modelocked YAG Laser Using Feedback with an Acousto-Optic Modulator, T. Matsumoto, M. Baba, T. Kuga, and M. Matsuoka, Jpn. J. Appl. Phys., 28, 391 - 395, Refereed

Books etc

  • Graphene Simulation, InTech,   2011 , ISBN:978-953-307-556-3, Field Emission from Graphene Nanostructure, Chapter 8
  • Carbon Nanotube and Related Field Emitters, Wiley-Blackwell,   2010 , ISBN:978-3-527-32734-8, Graphite Nanoneedle Field Emitter, Chapter 13
  • Properties of Porous Silicon, INSPEC,   1997 , ISBN:0-85296-932-5, Nonlinear OpticalProperties of Porous Silicon, Chapter 8.4
  • Porous Silicon, World Scientific,   1994 , ISBN:978-981-02-1634-4, Porous Silicon: Microstructure, Optical Properties, and Application to Light Emitting Diodes, Chapter 18

Conference Activities & Talks

  • Demonstration of GaInN-based Laser Pumped by an Electron Beam, International Workshop on Nitride Semiconductors 2014,   2014
  • Light Sources using Field Emitter Technologies, 10th International Meeting on Information Display/International Display Manufacturing Conference and Asia Display 2010,   2010
  • Field Emission and Ion Microscopy about Cloverleaf Pattern, 22nd International Vacuum Nanoelectronics Conference,   2009
  • Emission Characteristics and Application of Semiconductor Field Emitters, 12th International Conference on Solid Films and Surfaces,   2004
  • Isotope Energy Shift of Luminescence in Hydrogen- and Deuterium Terminated Porous Silicon, The 5th IUMRS International Conference in Asia,   1998
  • Stabilization of Porous Silicon by Deuterium Termination, International Workshop on the Role of Hydrogen and Deuterium in Hot Electron Semiconductor Device Degradation,   1998
  • SiC/Porous Si Junctions, 7th International Conference on Solid Films and Surfaces,   1994
  • Study of Photo- and Electro- Luminescence in Porous Silicon, International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon,   1993

Patents

  • 特願2016-098165
  • 特願2015-083181
  • 特願2015-027499
  • 特願2015-006324
  • 特願2012-007868, 特開2012-115834, 特許5406748
  • 特願2014-136967
  • 特願2014-126604
  • 特願2014-126579
  • 特願2014-106083
  • 特願2014-063105
  • 特願2014-041698, 特開2011-124206, 特許5567390
  • 特願2014-041439, 特許6279350
  • 特願2014-032636
  • 特願2014-032341, 特許6371075
  • 特願2014-030962
  • 特願2014-032629
  • 特開2014-011377, 特許5943738
  • 特願2013-180084
  • 特願2013-180057, 特許6253313
  • 特願2013-172615
  • 特願2013-173247
  • 特願2012-540726
  • 特願2013-076702, 特許6089196
  • 特願2013-076701
  • 特願2013-091408, 特許6165495
  • 特願2012-255279
  • 特願2012-234767
  • 特願2012-234766
  • 特開2014-063667
  • 特開2014-063666, 特許5975816
  • 特願2012-247450
  • 特願2012-007868, 特開2012-115834, 特許5425239
  • 特開2013-235864, 特許5689934
  • WO2013/094363(国際特許), 特開2013-134875
  • WO2013 / 094363(国際特許), 特開2013-134873, 特許5964581
  • WO2013/0094363(国際特許), 特開2013-131467
  • WO2013/061993(国際特許), 特開2013-93293, 特許5989984
  • WO2012/056806(国際特許), 特開2012-64728, 特許5830468
  • 特開2012-199174, 特許5833325
  • 特開2012-137477
  • 特開2012-64727
  • 特開2011-222211, 特許5506514
  • 特開2011-154980, 特許5406748
  • 特開2011-133239, 特許5536437
  • 特開2011-133233, 特許5536436
  • 特開2011-49281, 特許5385054
  • 特開2011-47304, 特許5465952
  • 特開2011-34734
  • 特開2011-9358
  • 特開2011-9254
  • 特開2011-9248
  • 特開2010-287647
  • 特開2010-287323, 特許5379565
  • 特開2010-198970, 特許5081851
  • 特開2010-184195, 特許5522343
  • 特開2010-184194, 特許5629931
  • 特開2010-98033, 特許5291427
  • 特開2010-25966, 特許5167004
  • 特開2009-289856, 特許5205125
  • 特開2009-277515, 特許5291378
  • 特開2009-187684
  • 特開2009-158304, 特許5126741
  • 特開2009-45516, 特許4892700
  • 特開2009-45515, 特許4947304
  • 特開2009-45514, 特許4942107
  • 特開2009-43903, 特許5170623
  • 特開2009-38260, 特許5046206
  • 特開2008-226760
  • 特開2008-170176, 特許4837572
  • 特開2008-170175
  • W02008/078494(国際特許), 特開2008-158148, 特許4739177
  • 特開2008-157702, 特許4937729
  • 特開2007-170928, 特許4933091
  • 特開2007-170849, 特許4955993
  • 特開2007-122883
  • 特開2007-95809, 特許5189247
  • 特開2007-81366, 特許4800099
  • 特開2006-210162
  • 特開2006-31996, 特許4365277
  • 特開2005-239826
  • 特開2005-223088, 特許4739680
  • 特開2005-187806, 特許4163174
  • 特開2005-32638, 特許4268471
  • 特開2004-300530, 特許4162042
  • 特開2004-31067, 特許4566501
  • 特開2003-288738, 特許4098545
  • 特開2003-156633
  • 特開2002-270515, 特許3830083
  • 特開2002-208568, 特許3854072
  • 特開2001-74871, 特許3073741
  • 特開2000-306674, 特許3637236
  • 特開2000-74626, 特許4048336
  • 特開平11-297624
  • 特開平11-17217
  • 特開平11-17216
  • 特開平10-256225
  • 特開平9-281088
  • 特開平9-281086
  • 特開平9-257757
  • 特開平9-257756
  • 特開平8-320310
  • 特開平8-285826
  • 特開平8-285823
  • 特開平8-285822
  • 特開平8-285821
  • 特開平8-285820
  • 特開平8-285819
  • 特開平8-285704, 特許3073741
  • 特開平8-285703
  • 特開平7-301645
  • 特開平7-288339
  • 特開平7-288337
  • 特開平7-286993
  • 特開平7-235691
  • 特開平7-225289
  • 特開平7-199243
  • 特開平7-199242
  • 特開平7-199241
  • 特開平7-187890
  • 特開平7-181524
  • 特開平7-181318
  • 特開平7-175094
  • 特開平7-104331
  • 特開平7-104328
  • 特開平7-99356
  • 特開平7-92520
  • 特開平7-92505
  • 特開平7-92435
  • 特開平7-92434
  • 特開平7-77674
  • 特開平7-64140
  • 特開平7-64138
  • 特開平6-310816
  • 特開平6-302536
  • 特開平6-302531
  • 特開平6-291036
  • 特開平6-283759
  • 特開平6-283755
  • 特開平6-283754
  • 特開平6-283753
  • 特開平6-281707
  • 特開平6-194426
  • 特開平6-132564
  • 特開平6-102296
  • 特開平6-97500
  • 特開平6-97499
  • 特開平6-97491
  • 特開平6-97486
  • 特開平6-97420
  • 特開平6-97419
  • 特開平6-97418
  • 特開平6-82492
  • 特開平5-288610
  • 特開平5-275743
  • 特開平5-226432
  • 特開平5-226431
  • 特開平5-206514
  • 特開平5-126866
  • 特開平4-369462
  • 特開平4-361581
  • 特開平4-361580
  • 特開平4-191652, 特許2717600
  • 特開平4-178538
  • 特開平4-127037, 特許2686674
  • 特開平4-9687
  • 特開平2-276961
  • WO2013/099760(国際特許)
  • WO2013/099759(国際特許)
  • WO2013/081127(国際特許)
  • WO2008/078477(国際特許)
  • WO2008/078494(国際特許)
  • PCT/JP2013/067234(国際特許)

Others

  •   2011 , メゾスコピック材料を用いた電力光無損失変換技術の研究開発, 管理番号20140000000507

Social Contribution Activities Information

Social Contribution

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  • 大阪大学 極限量子科学研究センター 招聘教授, Others, 国立大学法人 大阪大学,   2009 04 01  - 2014 03 31 , Visiting Professor, Center for Quantum Science and Technology under Extreme Conditions, Osaka university
  • 大阪大学 大学院基礎工学研究科 招聘教授, Others, 国立大学法人 大阪大学,   2014 04 01  - 2015 03 31 , Visiting Professor, Graduate School of Engineering Science, Osaka university


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